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S822T/S822TW/S822TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Observe precautions for handling. Electrostatic sensitive device.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain
2
1
2
1
94 9279
13 579
13 653
13 566
3
4
3
4
S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
S822TW Marking: W22 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 654
13 566
4
3
S822TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85050 Rev. 3, 20-Jan-99
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S822T/S822TW/S822TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 -65 to +150 Unit V V V mA mW C C
Tamb 125 C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 3 V, IC = 1 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 1 mA V(BR)CEO 6 V VCEsat 0.1 0.4 V hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Test Conditions VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT Ccb Min Typ 4.7 5.2 0.2 1.1 Fopt 1.8 2 Gpe @Fopt e ot IC Re( (h11e) ) 13.5 12.5 14.0 3 50 50 Max Unit GHz GHz pF dB dB dB dB dB dB mA
Noise figure
Power g gain Collector current for fT max Real part of input impedance
W W
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Document Number 85050 Rev. 3, 20-Jan-99
S822T/S822TW/S822TRW
Vishay Telefunken Common Emitter S-Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 0.974 0.967 0.956 0.941 0.926 0.907 0.890 0.870 0.851 0.833 0.814 0.794 0.773 0.919 0.897 0.864 0.824 0.781 0.735 0.693 0.647 0.605 0.567 0.526 0.491 0.458 ANG deg -4.0 -7.9 -11.8 -15.6 -19.0 -22.5 -25.8 -29.3 -32.3 -35.6 -39.0 -42.4 -45.6 -6.9 -13.7 -19.8 -25.7 -31.0 -36.1 -40.5 -44.6 -48.5 -52.4 -56.4 -60.1 -64.4 LIN MAG 1.86 1.84 1.82 1.79 1.75 1.72 1.68 1.66 1.63 1.60 1.58 1.57 1.55 4.86 4.78 4.62 4.41 4.21 4.00 3.82 3.62 3.46 3.30 3.16 3.04 2.92 S21 ANG deg 175.2 169.7 164.2 158.9 153.9 149.2 145.0 141.0 136.1 132.6 128.6 124.9 121.2 171.8 163.4 155.7 148.3 141.3 135.3 129.4 124.3 118.9 114.3 110.0 105.7 102.0 LIN MAG 0.012 0.024 0.035 0.046 0.056 0.066 0.075 0.084 0.092 0.099 0.108 0.115 0.121 0.012 0.023 0.034 0.043 0.051 0.058 0.064 0.071 0.076 0.081 0.085 0.090 0.094 S12 ANG deg 86.4 82.4 78.6 75.1 71.7 69.0 66.4 63.9 61.1 59.0 56.9 54.8 52.7 84.3 78.4 73.0 68.4 64.0 60.6 58.2 54.7 52.0 49.8 48.1 46.1 44.9 LIN MAG 0.997 0.993 0.87 0.979 0.968 0.959 0.951 0.940 0.930 0.924 0.913 0.904 0.895 0.992 0.979 0.957 0.933 0.909 0.881 0.858 0.836 0.814 0.796 0.778 0.763 0.747 S22 ANG deg -2.3 -4.8 -6.9 -9.3 -11.4 -13.1 -15.2 -16.9 -18.8 -20.4 -22.2 -24.0 -25.7 -3.6 -7.1 -10.2 -13.0 -15.6 -17.3 -19.2 -20.7 -22.3 -23.6 -24.9 -26.3 -27.5
0.5
2
1.5
Document Number 85050 Rev. 3, 20-Jan-99
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S822T/S822TW/S822TRW
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb - Collector Base Capacitance ( pF ) 0
13619
50 P tot - Total Power Dissipation ( mW ) 40 30 20 10 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C )
0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB - Collector Base Voltage ( V )
13621
Figure 1.. Total Power Dissipation vs. Ambient Temperature
7000 f T - Transition Frequency ( MHz ) f=500MHz 6000 5000 4000 3000 2000 1000 0 0
13620
Figure 3.. Collector Base Capacitance vs. Collector Base Voltage
3V
2V
VCE=1V
1
2
3
4
5
IC - Collector Current ( mA )
Figure 2.. Transition Frequency vs. Collector Current
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Document Number 85050 Rev. 3, 20-Jan-99
S822T/S822TW/S822TRW
Vishay Telefunken VCE = 2 V, IC = 1.5 mA , Z0 = 50 W S11
j 120 j0.5 j2 900 150 j0.2 j5 500 1300MHz 30
S12
90 60
0
0.2
0.5
1
2
5
100 -j5
1
-j0.2
13 558
S21
90 120 900 150 500 1300MHz 30 60
2
4
0
0
-j0.2 -150 -30
-120
13 560
-60 -90
13 561
Figure 5.. Forward transmission coefficient
Document Number 85050 Rev. 3, 20-Jan-99
AAAAAAAAAA AA AAAAAAAAAA AA
100 180
AAAAAAAAAA AA AAAAAAAAAA AA
1300MHz 900 500 -j0.5 -j -j2
180
100
0.04
0.08
0
-150
-30
-120
13 559
-60 -90
Figure 4.. Input reflection coefficient
Figure 6.. Reverse transmission coefficient
S22
j j0.5 j2
j0.2
j5
0.2
0.5
1
2
5
100 500 -j5
1
1300MHz
-j0.5 -j
-j2
Figure 7.. Output reflection coefficient
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S822T/S822TW/S822TRW
Vishay Telefunken Dimensions of S822T in mm
96 12240
Dimensions of S822TW in mm
96 12237
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Document Number 85050 Rev. 3, 20-Jan-99
S822T/S822TW/S822TRW
Vishay Telefunken Dimensions of S822TRW in mm
96 12238
Document Number 85050 Rev. 3, 20-Jan-99
www.vishay.de * FaxBack +1-408-970-5600 7 (8)
S822T/S822TW/S822TRW
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85050 Rev. 3, 20-Jan-99

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